IndiumV3, Main, Repository, bibRecord, 000226

Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers

Identifieur interne : 000226 ( Main/Repository ); précédent : 000225; suivant : 000227

Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers

Auteurs : RBID : Pascal:13-0288274

Descripteurs français

Pascal (Inist)
- Luminescence, Propriété optique, Densité élevée, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Couche mince, Couche tampon, Epitaxie jet moléculaire, Condition opératoire, Fluctuation, Photoluminescence, Largeur raie, Diode, Nanostructure, InAs, Substrat GaAs, 7820, 8107T, 8107, 8115H.

English descriptors

KwdEn :
- Buffer layer, Diodes, Fluctuations, High density, III-V compound, III-V semiconductors, Indium arsenides, Line widths, Luminescence, Molecular beam epitaxy, Nanostructured materials, Nanostructures, Operating conditions, Optical properties, Photoluminescence, Quantum dots, Thin films.

Abstract

In order to achieve wideband luminescence, ultrahigh density InAs quantum dots (QDs) were grown on GaAsSb buffer layers by molecular beam epitaxy under various growth conditions. Ultrahigh density of 3.8-5.2 × 10¹¹ cm^-2 and large size fluctuation were obtained. Photoluminescence (PL) spectra of ultrahigh density QD layers were changed by adjusting the growth conditions. Three ultrahigh density QD layers with different PL spectra were stacked on GaAs (001) substrate. The PL spectrum of edge emission revealed strong intensity and a broad linewidth of 194 nm. The presented QD structures are expected for development of wideband superluminescent diodes.

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Pascal:13-0288274

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers</title>
<author><name sortKey="Osaka, Yuji" uniqKey="Osaka Y">Yuji Osaka</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka</s1>
<s2>Chofu, Tokyo 182-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Chofu, Tokyo 182-8585</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tanabe, Hiroyuki" uniqKey="Tanabe H">Hiroyuki Tanabe</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka</s1>
<s2>Chofu, Tokyo 182-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Chofu, Tokyo 182-8585</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yamada, Kazuhiro" uniqKey="Yamada K">Kazuhiro Yamada</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka</s1>
<s2>Chofu, Tokyo 182-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Chofu, Tokyo 182-8585</wicri:noRegion>
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<author><name sortKey="Yamaguchi, Koichi" uniqKey="Yamaguchi K">Koichi Yamaguchi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka</s1>
<s2>Chofu, Tokyo 182-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Chofu, Tokyo 182-8585</wicri:noRegion>
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<publicationStmt><idno type="inist">13-0288274</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0288274 INIST</idno>
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<idno type="wicri:Area/Main/Corpus">000828</idno>
<idno type="wicri:Area/Main/Repository">000226</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Buffer layer</term>
<term>Diodes</term>
<term>Fluctuations</term>
<term>High density</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Line widths</term>
<term>Luminescence</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Operating conditions</term>
<term>Optical properties</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Luminescence</term>
<term>Propriété optique</term>
<term>Densité élevée</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Couche mince</term>
<term>Couche tampon</term>
<term>Epitaxie jet moléculaire</term>
<term>Condition opératoire</term>
<term>Fluctuation</term>
<term>Photoluminescence</term>
<term>Largeur raie</term>
<term>Diode</term>
<term>Nanostructure</term>
<term>InAs</term>
<term>Substrat GaAs</term>
<term>7820</term>
<term>8107T</term>
<term>8107</term>
<term>8115H</term>
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<front><div type="abstract" xml:lang="en">In order to achieve wideband luminescence, ultrahigh density InAs quantum dots (QDs) were grown on GaAsSb buffer layers by molecular beam epitaxy under various growth conditions. Ultrahigh density of 3.8-5.2 × 10<sup>11</sup>
 cm<sup>-2</sup>
 and large size fluctuation were obtained. Photoluminescence (PL) spectra of ultrahigh density QD layers were changed by adjusting the growth conditions. Three ultrahigh density QD layers with different PL spectra were stacked on GaAs (001) substrate. The PL spectrum of edge emission revealed strong intensity and a broad linewidth of 194 nm. The presented QD structures are expected for development of wideband superluminescent diodes.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1>
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<fA11 i1="01" i2="1"><s1>OSAKA (Yuji)</s1>
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<fA11 i1="02" i2="1"><s1>TANABE (Hiroyuki)</s1>
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<fA12 i1="01" i2="1"><s1>AKIMOTO (Katzuhiro)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Department of Engineering Science, The University of Electro-Communications, 1-5-1 Chofugaoka</s1>
<s2>Chofu, Tokyo 182-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA15 i1="01"><s1>University of Tsukuba</s1>
<s3>JPN</s3>
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<sZ>2 aut.</sZ>
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<fA20><s1>422-425</s1>
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<fA21><s1>2013</s1>
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<fA43 i1="01"><s1>INIST</s1>
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<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
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<fC01 i1="01" l="ENG"><s0>In order to achieve wideband luminescence, ultrahigh density InAs quantum dots (QDs) were grown on GaAsSb buffer layers by molecular beam epitaxy under various growth conditions. Ultrahigh density of 3.8-5.2 × 10<sup>11</sup>
 cm<sup>-2</sup>
 and large size fluctuation were obtained. Photoluminescence (PL) spectra of ultrahigh density QD layers were changed by adjusting the growth conditions. Three ultrahigh density QD layers with different PL spectra were stacked on GaAs (001) substrate. The PL spectrum of edge emission revealed strong intensity and a broad linewidth of 194 nm. The presented QD structures are expected for development of wideband superluminescent diodes.</s0>
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<s5>29</s5>
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<s5>29</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s4>INC</s4>
<s5>46</s5>
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<s4>INC</s4>
<s5>47</s5>
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<fC03 i1="20" i2="3" l="FRE"><s0>7820</s0>
<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>73</s5>
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<fC03 i1="23" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
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<fN44 i1="01"><s1>OTO</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1>
<s2>17</s2>
<s3>Nara JPN</s3>
<s4>2012-09-23</s4>
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Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers

Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri